A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy-Reference-Cited by-同舟云学术

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A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy

Published:2018-12 Issue:12 Volume:44 Page:1127-1129
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Vasil’ev V. I.,Gagis G. S.,Levin R. V.,Marichev A. E.,Pushnyi B. V.,Scheglov M. P.,Kuchinskii V. I.,Ber B. Ya.,Kazantsev D. Yu.,Gorokhov A. N.,Popova T. B.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785018120593.pdf

Reference8 articles.

1. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).

2. M. Razeghi, MOCVD Challenge. Survey of GaInAsP–InP and GaInAsP–GaAs for Photonic and Electronic Device Applications, 2nd ed. (Taylor and Francis/CRC, Boca Raton, FL, 2010).

3. P.-H. Lei, Opt. Commun. 273, 532 (2007).

4. W. L. Holstein, J. Cryst. Growth 167, 525 (1996).

5. V. V. Romanov, M. V. Baidakova, and K. D. Moiseev, Semiconductors 48, 733 (2014).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlxInyGa1 – x – yPzAs1 – z/GaAs Graded-Gap Heterostructures for Photovoltaic Converters;Technical Physics Letters;2022-02

2. Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy;Semiconductors;2019-11

3. Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates;Technical Physics Letters;2019-10

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