Atomic and electronic structure peculiarities of silicon wires formed on substrates with varied resistivity according to ultrasoft X-ray emission spectroscopy-Reference-Cited by-同舟云学术

Atomic and electronic structure peculiarities of silicon wires formed on substrates with varied resistivity according to ultrasoft X-ray emission spectroscopy

Published:2015-04 Issue:4 Volume:41 Page:344-347
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Turishchev S. Yu.,Terekhov V. A.,Nesterov D. N.,Koltygina K. G.,Sivakov V. A.,Domashevskaya E. P.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S106378501504015X.pdf

Reference13 articles.

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4. V. A. Sivakov, F. Voigt, A. Berger, et al., Phys. Rev. B 82, 125446 (2010).

5. E. P. Domashevskaya, O. A. Golikova, V. A. Terekhov, and S. N. Trostyanskii, J. Non-Cryst. Solids 90, 135 (1987).

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