The Effect of AlN Buffer Layer Morphology on the Structural Quality of a Semipolar GaN Layer Grown on a Si(001) Substrate, According to Transmission Electron Microscopy Data-Reference-Cited by-同舟云学术

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The Effect of AlN Buffer Layer Morphology on the Structural Quality of a Semipolar GaN Layer Grown on a Si(001) Substrate, According to Transmission Electron Microscopy Data

Published:2023-12 Issue:S1 Volume:49 Page:S34-S37
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Kirilenko D. A.,Myasoedov A. V.,Kalmykov A. E.,Sorokin L. M.

Publisher

Pleiades Publishing Ltd

Link

https://link.springer.com/content/pdf/10.1134/S1063785023900303.pdf

Reference18 articles.

1. http://www.matprop.ru/InN_dvdv

2. R. R. Reeber, K. Wang, MRS Online Proc. Library, 622, 6351 (2000). https://doi.org/10.1557/PROC-622-T6.35.1

3. L. Liu, J. H. Edgar, Mater. Sci. Eng. R, 37, 61 (2002). https://doi.org/10.1016/S0927-796X(02)00008-6

4. F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. B, 56, R10024 (1997). https://doi.org/10.1103/PhysRevB.56.R10024

5. F. Bernardini, V. Fiorentini, Phys. Rev. B, 57, R9427 (1998). https://doi.org/10.1103/PhysRevB.57.R9427

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