Spintronic Properties of the Interface between Si(111) and 3C–SiC(111) Grown by the Method of Coordinated Substitution of Atoms
Author:
Publisher
Pleiades Publishing Ltd
Subject
Physics and Astronomy (miscellaneous)
Link
https://link.springer.com/content/pdf/10.1134/S1063785022090036.pdf
Reference15 articles.
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3. A. Boretti, Nat. Photon. 8, 88 (2014). https://doi.org/10.1038/nphoton.2013.375
4. H. J. von Bardeleben, S. A. Zargaleh, J. L. Cantin, W. B. Gao, T. Biktagirov, and U. Gerstmann, Phys. Rev. Mater. 3, 124605 (2019). https://doi.org/10.1103/PhysRevMaterials.3.124605
5. S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 313001 (2014). https://doi.org/10.1088/0022-3727/47/31/313001
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