Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon-Reference-Cited by-同舟云学术

Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

Published:2010-08 Issue:8 Volume:36 Page:741-744
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Bakhadyrkhanov M. K.,Ayupov K. S.,Iliev Kh. M.,Mavlonov G. Kh.,Sattorov O. É.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785010080195.pdf

Reference8 articles.

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2. M. K. Bakhadyrkhanov, O. E. Sattorov, Kh. M. Iliev, K. S. Ayupov, and T. Umaier, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 823 (2005) [Semiconductors 39, 789 (2005)].

3. T. S. Lagunova, T. I. Voronina, M. P. Mikhailova, K. D. Moiseev, E. Samokhin, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 901 (2005) [Semiconductors 37, 876 (2003)].

4. V. E. Kaminskii, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1360 (2002) [Semiconductors 36, 1276 (2002)].

5. E. S. Demidov, V. V. Podol’skii, V. P. Lesnikov, S. A. Levchuk, S. N. Gusev, and V. V. Karzanov, Laser Plasma Deposition of Nanodimensional Layers of Silicon-Based Magnetic Semiconductors and Heusler Alloys, Silicon-2009 Conference (Novosibirsk, 2009) [in Russian].

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