Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al2O3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions-Reference-Cited by-同舟云学术

Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al2O3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions

Published:2013-01 Issue:1 Volume:39 Page:51-54
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Buzynin Yu. N.,Viktorov M. E.,Vodop’yanov A. V.,Golubev S. V.,Drozdov M. N.,Drozdov Yu. N.,Luk’yanov A. Yu.,Mansfeld D. A.,Skorokhodov E. V.,Khrykin O. I.,Shashkin V. I.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785013010069.pdf

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1. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation;Technical Physics Letters;2015-03

2. Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation;Japanese Journal of Applied Physics;2013-11-01