Photoconductivity of sulfur-doped silicon near 10.6 µm-Reference-Cited by-同舟云学术

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Photoconductivity of sulfur-doped silicon near 10.6 µm

Published:1997-12 Issue:12 Volume:31 Page:1231-1233
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Siyabekov Kh. B.,Tulanov V. T.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187300.pdf

Reference5 articles.

1. N. Selar, Infrared Phys. 167, 435 (1976).

2. V. S. Vavilov, I. P. Kekelidze, and L. S. Smirnov, Effect of Radiation on Semiconductors [in Russian], Nauka, Moscow, 1988.

3. A. A. Lebedev, A. T. Mamadalimov, and Sh. Makhkamov, Fiz. Tekh. Poluprovodn. 8, 262 (1974) [Sov. Phys. Semicond. 8, 169 (1974)].

4. G. B. Gorlin, V. T. Tulanov, and Kh. B. Siyabekov, Zh. Tekh. Fiz. 67, 142 (1997) [Tech. Phys. 42, 1239 (1997)].

5. Yu. A. Astrov, A. A. Lebedev, A. T. Mamadalimov, Sh. S. Kasymov, and L. G. Paritskii, Deposited in All-Union Institute of Scientific and Technical Information, No. 2463-75 (1975).

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1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation;Semiconductors;2001-08

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