Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V-Reference-Cited by-同舟云学术

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Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V

Published:2003-11 Issue:11 Volume:37 Page:1266-1274
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Pokrovskii Ya. E.,Khval’kovskii N. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1626206.pdf

Reference18 articles.

1. Ya. E. Pokrovskii and O. I. Smirnova, Pis’ma Zh. Éksp. Teor. Fiz. 51, 377 (1990) [JETP Lett. 51, 429 (1990)].

2. Ya. E. Pokrovskii and O. I. Smirnova, Mater. Sci. Forum 65–67, 271 (1990).

3. I. V. Altukhov, Ya. E. Pokrovskii, O. I. Smirnova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 24, 1134 (1990) [Sov. Phys. Semicond. 24, 717 (1990)].

4. V. N. Abakumov, V. I. Perel’, and I. N. Yassievich, Nonradiative Recombination in Semiconductors (Peterb. Inst. Yad. Fiz. Ross. Akad. Nauk, St. Petersburg, 1997).

5. M. Pollak and T. M. Geballe, Phys. Rev. 122, 1724 (1961).

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1. Impurity pairs and excitation relaxation in doped silicon;Journal of Experimental and Theoretical Physics Letters;2004-06

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