Lateral electronic transport in short-period InAs/GaAs superlattices at the threshold of quantum dot formation-Reference-Cited by-同舟云学术

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Lateral electronic transport in short-period InAs/GaAs superlattices at the threshold of quantum dot formation

Published:2003-01 Issue:1 Volume:37 Page:70-76
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kul’bachinskii V. A.,Lunin R. A.,Rogozin V. A.,Mokerov V. G.,Fedorov Yu. V.,Khabarov Yu. V.,Narumi E.,Kindo K.,de Visser A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1538542.pdf

Reference15 articles.

1. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 385 (1998) [Semiconductors 32, 343 (1998)].

2. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1998).

3. P. W. Fry, I. E. Itskevich, D. J. Mowbray, et al., Phys. Rev. Lett. 84, 733 (2000).

4. A. D. Yoffe, Adv. Phys. 50, 1 (2001).

5. T. A. Polyanskaya and Yu. V. Shmartsev, Fiz. Tekh. Poluprovodn. (Leningrad) 23(1), 3 (1989) [Sov. Phys. Semicond. 23, 1 (1989)].

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