Charge and magnetization transport in Cd0.81Mn0.19GeP2 dilute magnetic semiconductor under high pressures-Reference-Cited by-同舟云学术

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Charge and magnetization transport in Cd0.81Mn0.19GeP2 dilute magnetic semiconductor under high pressures

Published:2012-07 Issue:7 Volume:57 Page:987-990
ISSN:0036-0236
Container-title:Russian Journal of Inorganic Chemistry
language:en
Short-container-title:Russ. J. Inorg. Chem.

Author:

Mollaev A. Yu.,Kamilov I. K.,Arslanov R. K.,Novotortsev V. M.,Marenkin S. F.,Trukhan V. M.,Arslanov T. R.,Zalibekov U. Z.,Fedorchenko I. V.

Publisher

Pleiades Publishing Ltd

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry,Materials Science (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S0036023612070145.pdf

Reference14 articles.

1. G. A. Medvedkin, Takayuki Ishibashi, Takao Nishi, et al. Jpn. J. Appl. Phys. 39, L949 (2000).

2. R. V. Demin, L. I. Koroleva, S. F. Marenkin, et al., Pis’ma Zh. Tekh. Fiz. 30(21), 81 (2004).

3. V. M. Novotortsev, V. T. Kalinnikov, L. I. Koroleva, et al., Zh. Neorg. Khim. 50, 552 (2005).

4. V. A. Ivanov, T. G. Aminov, V. M. Novotortsev, and V. T. Kalinnikov, Izv. Akad. Nauk, Ser. Khim., No. 11, 2255 (2004).

5. A. Yu. Mollaev, I. K. Kamilov, R. K. Arslanov, et al., Phys. Status Solidi 246(3), 655 (2009).

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1. Hall effect in a magnetogranulated structure of a semiconductor-ferromagnetic system at high pressures;Inorganic Materials;2014-06-15

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