Electronic structure of magnetic semiconductors Cd1 − x Mn x GeAs2 and Cu1 − x Mn x GaTe2-Reference-Cited by-同舟云学术

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Electronic structure of magnetic semiconductors Cd1 − x Mn x GeAs2 and Cu1 − x Mn x GaTe2

Published:2007-08 Issue:8 Volume:52 Page:1243-1247
ISSN:0036-0236
Container-title:Russian Journal of Inorganic Chemistry
language:en
Short-container-title:Russ. J. Inorg. Chem.

Author:

Murashov S. V.,Yarzhemsky V. G.,Nefedov V. I.,Murav’ev E. N.

Publisher

Pleiades Publishing Ltd

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry,Materials Science (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S0036023607080141.pdf

Reference20 articles.

1. H. Ohno, Science 281, 951 (1998).

2. G. A. Medvedkin, T. Ishibashi, T. Nishi, and K. Sato, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 35(3), 305 (2001).

3. T. Dietl, Semicond. Sci. Technol. 17, 377 (2002).

4. V. M. Novotortsev, V. T. Kalinnikov, L. I. Koroleva, et al., Zh. Neorg. Khim. 50(4), 552 (2005) [Russ. J. Inorg. Chem. 50 (4), 492 (2005)].

5. V. M. Novotortsev, K. K. Palkina, S. G. Mikhailov, et al., Neorg. Mater. 41, 519 (2005) [Inorg. Mater. 41 (5), 439 (2005)].

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