Electronic and optical properties of AlAs/AlxGa1−x As(110) superlattices-Reference-Cited by-同舟云学术

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Electronic and optical properties of AlAs/AlxGa1−x As(110) superlattices

Published:2003-05 Issue:5 Volume:37 Page:573-580
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Karavaev G. F.,Chernyshov V. N.,Egunov R. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1575364.pdf

Reference7 articles.

1. G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 558 (2002) [Semiconductors 36, 527 (2002)].

2. G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 709 (2002) [Semiconductors 36, 670 (2002)].

3. P. Tronc, Yu. E. Kitaev, A. G. Panfilov, et al., Phys. Rev. B 61, 1999 (2000).

4. M. Yoshita, N. Kondo, H. Sakaki, et al., Phys. Rev. B 63, 075305 (2001).

5. S. Nojima, Phys. Rev. B 47, 13535 (1993).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices;Revista Mexicana de Física;2021-01-07

2. Tailoring of Bandgap to Tune the Optical Properties of Ga1−xAlxY (Y = As, Sb) for Solar Cell Applications by Density Functional Theory Approach;Zeitschrift für Naturforschung A;2019-09-02

3. Mixing of hole states in GaAs/AlAs(110) heterostructures;Semiconductors;2010-10

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