Influence of annealing on the dislocation-related electrical conductivity of germanium-Reference-Cited by-同舟云学术

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Influence of annealing on the dislocation-related electrical conductivity of germanium

Published:2000-05 Issue:5 Volume:34 Page:527-533
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shevchenko S. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1188021.pdf

Reference22 articles.

1. Yu. A. Osip’yan, V. I. Tel’yanskii, and S. A. Shevchenko, Zh. Éksp. Teor. Fiz. 72, 1543 (1977) [Sov. Phys. JETP 45, 810 (1977)].

2. V. A. Grazulis, V. V. Kveder, and V. Yu. Mukhina, Phys. Status Solidi A 43, 407 (1977); 44, 107 (1977).

3. Yu. A. Osip’yan and S. A. Shevchenko, Pis’ma Zh. Éksp. Teor. Fiz. 20, 709 (1974) [JETP Lett. 20, 328 (1974)].

4. V. A. Goncharov, Yu. A. Osip’yan, and S. A. Shevchenko, Fiz. Tverd. Tela (Leningrad) 29, 1928 (1987) [Sov. Phys. Solid State 29, 1110 (1987)].

5. V. V. Kveder, R. Labusch, and Yu. A. Ossipyan, Phys. Status Solidi A 92, 293 (1985).

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