Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures-Reference-Cited by-同舟云学术

Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures

Published:2005-03 Issue:3 Volume:39 Page:336-342
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Domashevskaya É. P.,Seredin P. V.,Dolgopolova É. A.,Zanin I. E.,Arsent’ev I. N.,Vinokurov D. A.,Stankevich A. L.,Tarasov I. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1882797.pdf

Reference19 articles.

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2. É. P. Domashevskaya, V. A. Terekhov, V. M. Kashkarov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1017 (2003) [Semiconductors 37, 992 (2003)].

3. Zh. I. Alferov, V. M. Andreev, S. G. Konnikov, et al., Krist. Tech. 11, 1013 (1976).

4. Molecular Beam Epitaxy and Heterostructures, Ed. by L. L. Chang and K. Ploog (Martimus Nishoff, Amsterdam, 1985; Mir, Moscow, 1989).

5. I. N. Arsent’ev, N. A. Bert, S. G. Konnikov, and V. E. Umanskii, Fiz. Tekh. Poluprovodn. (Leningrad) 14, 96 (1980) [Sov. Phys. Semicond. 14, 53 (1980)].

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