Identification of photoluminescence centers in oxygen- and erbium-doped a-Si(H) films-Reference-Cited by-同舟云学术

Identification of photoluminescence centers in oxygen- and erbium-doped a-Si(H) films

Published:2011-08 Issue:4 Volume:37 Page:406-410
ISSN:1087-6596
Container-title:Glass Physics and Chemistry
language:en
Short-container-title:Glass Phys Chem

Author:

Bordovskii G. A.,Dashina A. Yu.,Naletko A. S.,Marchenko A. V.,Seregin P. P.,Terukov E. I.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites

Link

http://link.springer.com/content/pdf/10.1134/S1087659611040031.pdf

Reference4 articles.

1. De Oliveira, V.I., Freire, F.L., Jr., and Zanatta, A.R., Optical Properties of Er and Er + Yb Doped Hydrogenated Amorphous Silicon Films, J. Phys.: Condens. Matter, 2006, vol. 18, pp. 7709–7716.

2. Medvedev, A.V., Pevtsov, A.B., Grudinkin, S.A., Feoktistov, N.A., Sakharov, V.A., Serenkov, I.T., and Golubev, V.G., Emitting a-SiOx(Er) Films and a-SiOx(Er)/a-Si: H Microcavities Doped with Er by Remote Magnetron Sputtering Technique, Nanotecnology, 2008, vol. 19, no. 31, art. 315201.

3. Undalov, Yu.K., Terukov, E.K., Gusev, O.B., Lebedev, V.M., and Trapeznikova, I.N., Effect of Electric Field in the Course of Obtaining a-SiOx: H(Er, O) Films by DC Magnetron Sputtering on Their Composition and Photoluminescence Intensity of Erbium Ions, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2008, vol. 42, no. 11, pp. 1357–1362 [Semiconductors (Engl. transl.), 2008, vol. 42, no. 11, pp. 1327–1334].

4. Dyakov, S.A., Zhigunov, D.M., and Timoshenko, V.Yu., Specific Features of Erbium Ion Photoluminescence in Structures with Amorphous and Crystalline Silicon Nanoclusters in Silica Matrix, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2010, vol. 44, no. 4, pp. 486–490 [Semiconductors (Engl. transl.), 2010, vol. 44, no. 4, pp. 467–471].