Water after-etching of n-type porous silicon in an electric field-Reference-Cited by-同舟云学术

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Water after-etching of n-type porous silicon in an electric field

Published:2001-07 Issue:7 Volume:46 Page:847-852
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Kostishko B. M.,Nagornov Yu. S.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1387545.pdf

Reference15 articles.

1. R. L. Smith and S. D. Collins, J. Appl. Phys. 71, R1 (1992).

2. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

3. V. S. Kuznetsov and A. V. Prokaznikov, Pis’ma Zh. Tekh. Fiz. 25(6), 81 (1999) [Tech. Phys. Lett. 25, 242 (1999)].

4. M. E. Kompan and I. Yu. Shabanov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 1859 (1995) [Semiconductors 29, 971 (1995)].

5. M. I. J. Beal, J. D. Benjamin, M. J. Uren, et al., J. Cryst. Growth 73, 622 (1985).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Discrete Model of Adsorption with a Finite Number of States;Technical Physics;2005

2. Peculiarities of the oxidation of porous silicon during aqueous after-etching;Technical Physics Letters;2004-04

3. The interaction of porous silicon with water: A chemographic effect;Technical Physics Letters;2002-09

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