Variation of the reflection coefficient of semiconductors in a wavelength range from 0.2 to 20 μm under the action of ultrasonic waves-Reference-Cited by-同舟云学术

Variation of the reflection coefficient of semiconductors in a wavelength range from 0.2 to 20 μm under the action of ultrasonic waves

Published:2002-09 Issue:9 Volume:28 Page:752-756
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Zaveryukhin B. N.,Zaveryukhina N. N.,Tursunkulov O. M.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1511774.pdf

Reference18 articles.

1. B. N. Zaveryukhin, V. D. Krevchik, R. A. Muminov, et al., in Proceedings of the XXXIII Conference on Nuclear Spectroscopy and Structure of Atomic Nucleus, 1983, p. 530.

2. A. G. Gaibov, B. N. Zaveryukhin, V. D. Krevchik, et al., in Proceedings of the XXXIII Conference on Nuclear Spectroscopy and Structure of Atomic Nucleus, 1983, p. 531.

3. A. G. Gaibov, B. N. Zaveryukhin, V. D. Krevchik, et al., Pis’ma Zh. Tekh. Fiz. 10(10), 616 (1984) [Sov. Tech. Phys. Lett. 10, 260 (1984)].

4. B. N. Zaveryukhin, Candidate’s Dissertation (Kiev, 1990).

5. L. E. Howards and I. J. Gilbert, J. Appl. Phys. 134(1), 236 (1963).

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