Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined Semiconductor Heterostructures-Reference-Cited by-同舟云学术

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Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined Semiconductor Heterostructures

Published:2005 Issue:1 Volume:39 Page:17
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Baı̆dus’ N. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1852636.pdf

Reference12 articles.

1. A. E. Zhukov, B. V. Volovik, S. S. Mikhrin, et al., Pis’ma Zh. Tekh. Fiz. 27(17), 51 (2001) [Tech. Phys. Lett. 27, 734 (2001)].

2. N. V. Baidus’, A. A. Biryukov, Yu. A. Danilov, et al., Izv. Ross. Akad. Nauk, Ser. Fiz. 67(2), 208 (2003).

3. A. Babinski, P. Witczak, A. Twardowski, and J. M. Baranowski, Appl. Phys. Lett. 78, 3992 (2001).

4. N. V. Baidus’, B. N. Zvonkov, P. B. Mokeeva, et al., Izv. Ross. Akad. Nauk, Ser. Fiz. 68(1), 251 (2004).

5. N. V. Baidus, B. N. Zvonkov, P. B. Mokeeva, et al., Semicond. Sci. Technol. 19, S469 (2004).

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