Free ion transport in the insulator layer and electron-ion exchange at an insulator-semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures-Reference-Cited by-同舟云学术

Free ion transport in the insulator layer and electron-ion exchange at an insulator-semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures

Published:1999-08 Issue:8 Volume:33 Page:877-882
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Gol’dman E. I.,Zhdan A. G.,Chucheva G. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187803.pdf

Reference43 articles.

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3. M. Lee, C. H. Lin, B. H. Lei, and C. D. Yang, Jpn. J. Appl. Phys., 37, L53 (1998).

4. E. I. Gol’dman, A. G. Zhdan, and G. V. Chucheva, Prib. Tekh. Eksp. No. 6, 110 (1997).

5. E. I. Gol’dman, A. G. Zhdan, and G. V. Chucheva, Fiz. Tekh. Poluprovodn. 31, 1468 (1997) [Semiconductors 31, 1268 (1997)].

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2. Ion transport phenomena in oxide layer on the silicon surface and electron–ion exchange effects at the SiO2/Si interface;Journal of Applied Physics;2001-01

3. Electron-ion exchange at the insulator-semiconductor interfaces and its influence on ion transport in the insulating layer;Semiconductors;2000-08

4. On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures;Semiconductors;2000-06