Physical model for the evolution of the defect system of silicon carbide with allowance for the internal elastic stress fields during implantation of Al+ and N+ and subsequent annealing-Reference-Cited by-同舟云学术

Physical model for the evolution of the defect system of silicon carbide with allowance for the internal elastic stress fields during implantation of Al+ and N+ and subsequent annealing

Published:1999-10 Issue:10 Volume:44 Page:1168-1174
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Kulikov D. V.,Trushin Yu. V.,Rybin P. V.,Kharlamov V. S.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1259426.pdf

Reference55 articles.

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3. M. Ruff, H. Mitlehner, and R. Helbig, IEEE Trans. Electron Devices ED-41, 1040 (1994).

4. G. Pensl and Th. Troffer, Solid State Phenom. 47–48, 115 (1996).

5. W. J. Choyke and G. Pensl, MRS Bull., No. 3, 25 (1997).

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