Simulating single-event effects associated with high-energy neutrons for different VLSI technologies-Reference-Cited by-同舟云学术

Simulating single-event effects associated with high-energy neutrons for different VLSI technologies

Published:2008-01 Issue:1 Volume:37 Page:47-54
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Baranov S. V.,Vaselegin B. V.,Osipenko P. N.,Chumakov A. I.,Yanenko A. V.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106373970801006X.pdf

Reference11 articles.

1. Ionizing Radiation Effects in MOS Devices and Circuits, Ma, T.P. and Dressendorfer, P.V., Eds., New York: Wiley, 1989.

2. Messenger, G.C. and Ash, M.S., Single Event Phenomena, New York: Chapman&Hall, 1997.

3. Nikiforov, A.Y., Telets, V.A., and Chumakov, A.I., Radiatsionnye effekty v KMOP integral’nykh skhemakh (Radiation Effects in CMOS Integrated Circuits), Moscow: Radio i Svyaz’, 1994.

4. The Radiation Design Handbook, European Space Agency, ESTEC, Noordwijk, 1993.

5. Chumakov, A.I., Deistvie kosmicheskoi radiatsii na IS (Space-Radiation Effects on ICs), Moscow: Radio i Svyaz’, 2004.

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