Formation of the nickel-platinum alloy silicide Schottky barriers-Reference-Cited by-同舟云学术

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Formation of the nickel-platinum alloy silicide Schottky barriers

Published:2014-01 Issue:1 Volume:43 Page:1-8
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Solodukha V. A.,Turtsevich A. S.,Solov’ev Ya. A.,Komarov F. F.,Mil’chanin O. V.,Kovaleva T. B.,Gaponenko S. V.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739713050077.pdf

Reference14 articles.

1. Popov, S., Elektronnye Komponenty, 2002, no. 8, p. 77.

2. Popov, S., Elektronnye Komponenty, 2002, no. 3, p. 35.

3. Baranov, V.V., Solov’ev, Ya.A., Tarasikov, M.V., et al., Izvestiya Belorusskoi inzhenernoi akademii, 2003, no. 1 (15)/4, p. 89.

4. Larrieu, G., Dubois, E., Wallart, X., and Baie, X.J., J. Appl. Phys., 2003, vol. 94, no. 12, p. 7801.

5. Turtsevich, A.S., Anufriev, D.L., Solov’ev, Ya.A., et al., Vakuumnaya tekh. i tekhnol., 2006, vol. 16, p. 271.

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1. Structural-phase junctions in the system of Pt–Si during rapid thermal treatment;Doklady of the National Academy of Sciences of Belarus;2020-05-17

2. INFLUENCE OF TIME MODES OF THERMAL TREATMENT ON Pt-Si SYSTEM MICROSTRUCTURE;Doklady BGUIR;2020-03-31

3. FORMATION OF PLATINUM SILICIDE DURING RAPID THERMAL PROCESSING OF THE PLATINUM- SILICON SYSTEM: MICROSTRUCTURE AND ELECTROPHYSICAL CHARACTERISTICS;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2019

4. FORMATION OF PLATINUM SILICIDE LAYERS DURING THE RAPID THERMAL PROCESSING OF THE PLATINUM–SILICON SYSTEM: STRUCTURAL-PHASE CHANGES;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2019

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