The effect of ionizing radiation on the characteristics of silicon-germanium microwave integrated circuits-Reference-Cited by-同舟云学术

The effect of ionizing radiation on the characteristics of silicon-germanium microwave integrated circuits

Published:2010-03 Issue:2 Volume:39 Page:122-133
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Elesin V. V.,Chukov G. V.,Gromov D. V.,Repin V. V.,Vavilov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739710020071.pdf

Reference4 articles.

1. Cressler, J.D., The Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, London: CRC Press, 2005, p. 1210.

2. Nikiforov, A.Yu. and Skorobogatov, P.K., Physical Bases of Laser Simulation of Volumetric Ionization Effects in ICs and PCs: Linear Model, Mikroelektronika, 2004, vol. 33, no. 2, pp. 91–107.

3. Diez, S., Ullan, M., et al., IHP SiGe:C BiCMOS Technologies as a Suitable Backup Solution for the ATLAS Upgrade Front-End Electronics, IEEE Nuclear Sci. Symp., 2008, vol. N94-4, pp. 3091–3097.

4. Ullan, M., Diez, S., Campabadal, F., Lozano, M., et al. Gamma Radiation Effects on Different Varieties of SiGe:C RBT Technologies, IEEE Trans. on Nuclear Sci., 2007, vol. 54, no. 4, pp. 989–993.

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