1. Skorobogatov, P.K., Kirgizova, A.V., Petrov, A.G., and Egorov, A.N., Selection of optimal parameters of laser radiation for modeling of transient ionization effects in CMOS LSI RAM, in Collected Articles Radiation Stability of Electronic Systems “Stoikost’ 2006”, Moscow: Nat. Res. Nucl. Univ. “MEPhI”, 2006, no. 9, pp. 179–180.
2. Habing, D.H., Use of laser to simulate radiation-induced transients in semiconductor and circuits, IEEE Trans., 1965, vol. NS-15, no. 5, pp. 91–100.
3. Syts’ko, Yu.I., Skorobogatov, P.K., Chumakov, A.I., et al., A system for numerical physical-topological two-dimensional simulation of semiconductor structures DIODE-2, Abstracts of Papers, in Rossiiskaya nauchnaya conferentsiya “Radiatsionnaya stoikost’ elektronnykh system (Lytkarino, 1999) (Russ. Sci. Conf. “Radiation Stability of Electronic Systems” (Lytkarino, 1999), Moscow: OAO ENPO “Spec. Electron. Syst.”-Res. Inst. Instrum. Making, 1999.
4. Nikiforov, A.Yu., Chumakov, A.I., Skorobogatov, P.K., et al., A “Radon-8” laser imitator of ionizing radiations based on the Al2O3: Ti3+ solid-state laser with a tunable wavelength, in Collected Articles Radiation Stability of Electronic Systems “Stoikost’ 2006”, Moscow: Nat. Res. Nucl. Univ. “MEPhI”, 2006, no. 9, pp. 211–212.
5. Nikiforov, A.Yu., Skorobogatov, P.K., Strikhanov, M.N., et al., Development of the base technology of prediction, evaluation, and control of radiation stability of microelectronic wares, Izv. Vyssh. Uchebn. Zaved., Elektronika, 2012, no. 5(97), pp. 18–23.