1. Touboul, A., Verdier, F., and Herrve, Y., Abstracts of Papers, Proc. Int. Conf. “Noise in Physical Systems and 1/f Fluctuations”, Musha, T., Sato, S., and Yamamoto, M., Eds.,. Kyoto, 1991, p. 73.
2. Zhigal’skii, G.P., and Gal’chenko, V.R., Excess Noise and Non-Linearity as Reliability Indicators for the Electronic Devices, Proc. 17th Int. Conf. “Noise and Fluctuation”, Sikula, J., Ed., Brno Univ. of Technol., 2003, pp. 749–754.
3. Bell, I.M., Camplin, D.A., Taylor, G.E., and Bannister, B.R., Supply Current Testing of Mixed Analogue and Digital ICs, Electron. Lett., 1991, vol. 27, no. 17, pp. 1581–1583.
4. Zhigal’skii, G.P., Kareev, I.A., Gvas’kov, A.A., and Rudakov, G.A., The 1/f-Noise in MOS Transistors with Different Types of Channel Conductivity at 300 and 77 K, Izv. Vyssh. Uchebn. Zaved., Elektron., 2007, no. 3, pp. 81, 82.
5. Zinchenko, V.F. and Romanenko, A.A., Comparison of Efficiency of the Effect of the X-Ray and Γ-Radiation on Bipolar Planar-Epitaxial Transistors, Vopr. Atomn. Nauki Tekhn. Ser. Fiz. Radiats. Vozd. Radioelektron. Apparat., 2007, no. 1–2, pp. 38–40.