The hanle effect in nonuniformly doped GaAs-Reference-Cited by-同舟云学术

The hanle effect in nonuniformly doped GaAs

Published:2003-12 Issue:12 Volume:45 Page:2255-2263
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Dzhioev R. I.,Zakharchenya B. P.,Kavokin K. V.,Lazarev M. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1635494.pdf

Reference26 articles.

1. G. A. Prinz, Science 282, 1660 (1998).

2. R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, et al., Phys. Rev. B 66, 245204 (2002);

3. R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, et al., Pis’ma Zh. Éksp. Teor. Fiz. 74, 200 (2001) [JETP Lett. 74, 182 (2001)].

4. R. I. Dzhioev, B. P. Zakharchenya, K. V. Kavokin, and P. E. Pak, Fiz. Tverd. Tela (St. Petersburg) 36, 2752 (1994) [Phys. Solid State 36, 1501 (1994)].

5. Optical Orientation, Modern Problems in Condensed Matter Science, Ed. by F. Meier and B. P. Zakharchenya (North-Holland, Amsterdam, 1984; Nauka, Leningrad, 1989).

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