Photosensitivity of porous silicon-layered III–VI semiconductors heterostructures-Reference-Cited by-同舟云学术

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Photosensitivity of porous silicon-layered III–VI semiconductors heterostructures

Published:1998-03 Issue:3 Volume:32 Page:320-321
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lebedev A. A.,Rud’ Yu. V.,Rud’ V. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187558.pdf

Reference7 articles.

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

2. A. A. Lebedev and Yu. V. Rud’, Pis’ma Zh. Tekh. Fiz. 21, 80 (1995) [Tech. Phys. Lett. 21, 79 (1995)].

3. A. A. Lebedev and Yu. V. Rud’, Pis’ma Zh. Tekh. Fiz. 22, 12 (1995) [Tech. Phys. Lett. 22, 483 (1995)].

4. Reference Data on the Physical and Chemical Properties of Semiconductor Materials [in Russian], Nauka, Moscow, 1978.

5. E. V. Astrova, A. A. Lebedev, A. D. Remenyuk, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 29, 1649 (1995) [Semiconductors 29, 858 (1995)].

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1. On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals;Semiconductor Physics, Quantum Electronics and Optoelectronics;2004-12-16

2. Photovoltaic effect in a-Si:H/n-InSe heterostructures;Semiconductors;2000-09

3. Dynamical parameters and phonon spectrum of crystal In4Te3;Physics of the Solid State;1999-10

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