Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals-Reference-Cited by-同舟云学术

Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals

Published:1997-09 Issue:9 Volume:31 Page:875-878
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Glazov V. M.,Timoshina G. G.,Mikhailova M. S.,Potemkin A. Ya.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187158.pdf

Reference18 articles.

1. A. Ya. Potemkin and I. E. Satsevich, The Effect of Heat Treatment on the Physical Properties of Silicon [in Russian], ONTI GIREDMET, Moscow (1962).

2. A. Ya. Potemkin, Izv. Akad. Nauk SSSR, Neorg. Mater. 8, 1353 (1972).

3. I. T. Bagraev, L. S. Vlasenko, V. M. Volle et al., Zh. Tekh. Fiz. 54, 917 (1984) [Sov. Phys. Tech. Phys. 29, 547 (1984)].

4. V. M. Glazov and V. S. Zemskov, The Physicochemical Principles of Semiconductor Doping [in Russian], Nauka, Moscow (1967).

5. Yu. N. Taran, V. Z. Kutsova, and K. I. Uzlov, Dokl Akad. Nauk Ukr. SSR, Fiz.-Mat. Tekhn. Nauki 6, 74 (1987).

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