Formation of a donor profile in silicon upon simultaneous implantation of phosphorus and sodium ions-Reference-Cited by-同舟云学术

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Formation of a donor profile in silicon upon simultaneous implantation of phosphorus and sodium ions

Published:2011-04 Issue:2 Volume:5 Page:358-361
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Korol’ V. M.,Astakhov V. P.,Vedenyapin S. A.,Zastavnoi A. V.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451011040100.pdf

Reference10 articles.

1. Yu. A. Evseev, Semiconductor Devices for High-Power High-Voltage Transducers (Energiya, Moscow, 1978) [in Russian].

2. A. M. Surma, E. A. Ladygin, P. B. Lagov, and V. N. Murashev, in Proceedings of the Conference on Silicon 2007 (MISiS, Moscow, 2007), p. 266.

3. V. M. Korol’, Phys. Status Solidi A 110, 9 (1988).

4. V. M. Korol’ and A. V. Zastavnoi, Poverkhnost’, No. 5, 74 (2001).

5. D. M. Caughey and R. E. Thomas, Proc. IEEE 55, 2192 (1967).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature diffusion of implanted sodium in silicon;Technical Physics Letters;2016-04

2. On the diffusion of implanted sodium in n-Si;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2014-11

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