Problems, prospects, and alternatives for semiconductor single crystal growth in space-Reference-Cited by-同舟云学术

Problems, prospects, and alternatives for semiconductor single crystal growth in space

Published:2009-02 Issue:1 Volume:3 Page:78-84
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Zakharov B. G.,Strelov V. I.,Osip’yan Yu. A.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451009010145.pdf

Reference13 articles.

1. D. Joseph, Stabitity of Fluid Motions (Springer, Berlin, 1976; Mir, Moscow, 1981).

2. V. I. Polezhaev, A. V. Bune, N. A. Verezub, et al., Mathematical Simulation of Convective Heat-Mass Transfer Based on the Navier-Stokes Equations (Nauka, Moscow, 1987) [in Russian].

3. P. K. Volkov and B. G. Zakharov, Dokl. Akad. Nauk 361(5), 616 (1998).

4. G. Muller, Crystals Growth from the Melt (Springer, Berlin, 1988; Mir, Moscow, 1991).

5. M. G. Mil’vidskii and V. B. Osvenskii, Structure Defects in the Monocrystals of Semiconductors (Metallurgiya, Moscow, 1984) [in Russian].

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