Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs-Reference-Cited by-同舟云学术

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Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs

Published:2002-02 Issue:2 Volume:36 Page:167-170
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kovalenko V. F.,Litvinova M. B.,Shutov S. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1453431.pdf

Reference11 articles.

1. K. D. Glinchuk, V. I. Guroshev, and A. V. Prokhorovich, Optoélektron. Poluprovodn. Tekh. 24, 66 (1992).

2. M. Suemitsu, M. Nishijima, and N. Miyamoto, J. Appl. Phys. 69, 7240 (1991).

3. M. W. Duncan, G. H. Westphal, and A. J. Purdes, J. Appl. Phys. 66, 2430 (1989).

4. Yu. N. Bol’sheva, M. A. Il’in, and A. V. Markov, Vysokochist. Veshchestva, No. 4, 210 (1989).

5. M. I. Kalinin, M. T. Lisitsa, and F. V. Motsnyi, Ukr. Fiz. Zh. 37(3), 330 (1992).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Synthesis and Photoluminescence and Cathodoluminescence Properties of CdSe, CdTe, PbS, InSb, and GaAs Colloidal Quantum Dots;Semiconductors;2019-08

2. Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation;Journal of Luminescence;2009-09

3. Photoluminescence of electron-hole plasma in semi-insulating undoped GaAs;Semiconductors;2004-12

4. Optical polarization of nuclear spins in GaAs;Physical Review B;2004-02-11

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