Changes in the state of phosphorus atoms in the silicon lattice as a result of interaction with radiation defects-Reference-Cited by-同舟云学术

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Changes in the state of phosphorus atoms in the silicon lattice as a result of interaction with radiation defects

Published:2002-04 Issue:4 Volume:36 Page:363-366
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bolotov V. V.,Kamaev G. N.,Smirnov L. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1469178.pdf

Reference16 articles.

1. V. I. Fistul’, Decomposition of Oversaturated Semiconductor Solid Solutions (Metallurgiya, Moscow, 1977).

2. S. S. Gorelik and M. Ya. Dashevskii, Material Science of Semiconductors and Insulators (Metallurgiya, Moscow, 1988).

3. V. P. Shapovalov and V. A. Gorodkin, Fiz. Tverd. Tela (Leningrad) 25, 614 (1983) [Sov. Phys. Solid State 25, 351 (1983)].

4. R. O. Schwenker, E. S. Pan, and R. F. Lever, J. Appl. Phys. 42, 3195 (1971).

5. M. L. Joshi and S. Dash, IBM Syst. J. 5, 271 (1967).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Qualitative Model of Electrical Conductivity of Irradiated Semiconductor;IgMin Research;2024-04-12

2. Nanorelief formation under ion irradiation of germanium and silicon surfaces;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2007-12

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