1. Aurivillius, B., Mixed bismuth oxides with layer lattices. I. The structure type of CaNb2Bi2O9, Ark. Kemi, 1949, vol. 1, pp. 463–480.
2. Kalinkin, A.N., Kozhbakhteev, E.M., Polyakov, A.E., and Skorikov, V.M., Application of BiFeO3 and Bi4Ti3O12 in ferroelectric memory, phase shifters of a phased array, and microwave HEMTs, Inorg. Mater., 2013, vol. 49. no. 10, pp. 1031–1043. https://doi.org/10.1134/S0020168513100038
3. Vorotilov, K.A., Mukhortov, V.M., and Sigov, A.S., Integrirovannye segnetoelektricheskie ustroistva (Integrated Experimental Devices), Moscow: Energoatomizdat, 2011.
4. Long, C., Chang, Q., and Fan, H., Differences in nature of electrical conductions among Bi4Ti3O12-based ferroelectric polycrystalline ceramics, Sci. Rep., 2017, vol. 7, pp. 4193–4207.https://doi.org/10.1038/s41598-017-03266-y
5. Zhang, N., Zhang, C., and Li, X., Preparation and properties of the ferroelectric materials based on BIT, Adv. Mater. Res., 2013, vol 91, pp. 146–149.
https://doi.org/www.scintific.nel/AMR.624.146