Integral isoconversional method for evaluating crystallization parameters of thin films of Ge2Sb2Te5 phase change memory materials
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Published:2017-01
Issue:1
Volume:53
Page:45-49
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ISSN:0020-1685
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Container-title:Inorganic Materials
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language:en
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Short-container-title:Inorg Mater
Author:
Sherchenkov A. A.,Kozyukhin S. A.,Babich A. V.,Lazarenko P. I.,Vargunin A. I.
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Reference21 articles.
1. Yang, J.J., Strukov, D.B., and Stewart, D.R., Memristive devices for computing, Nat. Nanotechnol., 2013, vol. 8, pp. 13–24. 2. Hu, J.-M., Li, Z., Chen, L.-Q., and Nan, C.-W., Highdensity magnetoresistive random access memory operating at ultralow voltage at room temperature, Nat. Commun., 2011, vol. 2, pp. 1–8. 3. Ishiwara, H., Okuyama, M., and Arimoto, Y., Ferroelectric Random Access Memories: Fundamentals and Applications, New York: Springer, 2004. 4. Burr, G.W., Breitwisch, M.J., Franceschini, M., Garetto, D., Gopalakrishnan, K., Jackson, B., Kurdi, B., Lam, C., Lastras, L.A., Padilla, A., Rajendran, B., Raoux, S., and Shenoy, R.S., Phase change memory technology, J. Vac. Sci. Technol., B, 2010, vol. 28, no. 2, pp. 223–262. 5. Raoux, S. and Wuttig, M., Phase Change Materials: Science and Applications, New York: Springer, 2009.
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