1. Salmanov, A.R. and Voronkova, G.I., A Model for Electrical Transport in Heat-Treated Silicon, Fiz. Tekh. Poluprovodn. (Leningrad), 1978, vol. 12, no. 10, pp. 1958–1963.
2. Borshchenskii, V.V., Brinkevich, D.I., and Petrov, V.V., Quench-Induced Defects in Germanium-Doped Silicon, Izv. Akad. Nauk SSSR, Neorg. Mater., 1990, vol. 26, no. 1, pp. 210–212.
3. Latushko, Ya.I., Nassur, F., and Petrov, V.V., IR Absorption of Thermal Donors in Aluminum-Doped Silicon, Zh. Prikl. Spektrosk., 1990, vol. 53, no. 3, pp. 402–406.
4. Fiziko-khimicheskie svoistva elementov (Physicochemical Properties of Elements), Samsonov, G.E., Ed., Kiev: Naukova Dumka, 1965.
5. Il–in, M.A., Kovarskii, V.Ya., and Orlov, A.F., Determination of Oxygen and Carbon in Silicon, Zavod. Lab., 1984, vol. 50, no. 1, pp. 24–32.