Author:
Azhdarov G. Kh.,Zeynalov Z. M.,Kyazimova V. K.,Huseynli L. A.
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Reference22 articles.
1. Milnes, A.G., Deep Impurities in Semiconductors, New York: Wiley, 1973.
2. Azhdarov, G.Kh., Kyazimzade, R.Z., and Hostut, M., Deep Impurity Levels in Ge-Si Alloys, Solid State Commun., 1999, vol. 111, pp. 675–679.
3. Shklovskii, B.N. and Efros, A.L., Elektronnye svoistva legirovannykh poluprovodnikov (Electronic Properties of Doped Semiconductors), Moscow: Nauka, 1979.
4. Zakhrabekova, Z.M., Zeinalov, Z.M., Kyazimova, V.K., and Azhdarov, G.Kh., Segregation of Aluminum and Indium Impurities in Ge1 − x Six Crystals, Neorg. Mater., 2007, vol. 43, no. 1, pp. 5–9 [Inorg. Mater. (Engl. Transl.), vol. 43, no. 1, pp. 3–7].
5. Azhdarov, G.Kh., Kucukomeroglu, T., Varilci, A., et al., Distribution of Components in Ge-Si Bulk Single Crystals Grown under the Continuous Feeding of the Melt with the Second Component (Si), J. Cryst. Growth, 2001, vol. 226, no. 4, pp. 437–442.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献