1. Nanotekhnologii v poluprovodnikovoi elektronike (Nanotechnologies in Semiconductor Electronics), Aseev, A.L., Ed., Novosibirsk: Sib. Otd. Ross. Akad. Nauk, 2007.
2. Djellal, L., Bouquelia, A., and Trari, M., Physical and Photoelectrochemical Properties of p-CuInSe2 Bulk Material, Mater. Chem. Phys., 2008, vol. 109, no. 1, pp. 99–104.
3. Gadzhiev, T.M., Babaev, A.A., Gadzhieva, R.M., et al., Properties of CuInSe2 Films Obtained by Methods of Selenization and Quasi-Equilibrium Deposition, Inorg. Mater., 2008, vol. 44, no. 12, pp. 1295–1299.
4. Rud’, V.Yu., Tivanov, M.S., Rud’, Yu.V., et al., Photosensitivity of Structures on Cu(In,Ga)(S,Se)2 Films Produced by Heat Treatment in S and Se Vapor, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2007, vol. 41, no. 10, pp. 1190–1194.
5. Abdullaev, M.A., Kamilov, I.K., Magomedova, D.Kh., and Khokhlachev, P.P., Effect of Thermal Oxidation on the Electrical Conductivity and Photoresponse of In2O3/CuInSe2 Structures, Inorg. Mater., 2007, vol. 43, no. 12, pp. 1279–1283.