Growth of Arsenic-Doped Hg1– xCdxTe (x ~ 0.4) Epilayers by Metalorganic Chemical Vapor Deposition
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Published:2019-10
Issue:10
Volume:55
Page:984-988
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ISSN:0020-1685
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Container-title:Inorganic Materials
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language:en
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Short-container-title:Inorg Mater
Author:
Evstigneev V. S.,Chilyasov A. V.,Moiseev A. N.,Kostyunin M. V.
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Reference14 articles.
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– xCdxTe epitaxial layers with x ~ 0.4 grown by the MOCVD method, Semiconductors, 2018, vol. 52, no. 6, pp. 702–707. 3. Maxey, C.D., Gale, I.G., Clegg, J.B., and Whiffin, P.A.C., Doping studies in MOVPE-grown CdxHg1 –
xTe, Semicond. Sci. Technol., 1993, vol. 8, pp. S183–S196. 4. Capper, P., Maxey, C.D., Whiffin, P.A.C., and Easton, B.C., Incorporation and activation of Group V elements in MOVPE-grown CdxHg1 –
xTe, J. Cryst. Growth, 1989, vol. 97, nos. 3–4, pp. 833–844. 5. Clerjaud, B., Cote, D., Svob, L., Marfaing, Y., and Druilhe, R., Hydrogen–acceptor pairing in CdTe epitaxial layers grown by OMVPE, Solid State Commun., 1993, vol. 85, no. 2, pp. 167–170.
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