1. Hanias, M. and Anagnostopoulos, A.N., Negative-differential- resistance effects in the TlGaTe2 ternary semiconductor, Phys. Rev. B: Condens. Matter Mater. Phys., 1993, vol. 160, no. 8, pp. 4261–4266.
2. Al Orainy, R.H., Interpretation of switching properties of InGaSe2 single crystal, Acta Phys. Pol., A, 2012, vol. 121, no. 3, pp. 666–672.
3. Orudzhev, G., Mamedov, N., Uchici, H., Yamamoto, N., Iiada, S., Gojaev, E., Toyota, H., and Hashimzade, F., Band structure and optical function of ternary chain InGaSe2, J. Phys. Chem. Solids, 2003, vol. 64, issues 9–10, pp. 1703–1706.
4. Gojayev, E.M., Orujov, G.S., Kerimova, R.A., and Allahyarov, E.A., Band structure and optical properties of a chain compound TlInTe2, Solid State Phys., 2006, vol. 48, no. 1, pp. 40–43.
5. Mobarak, M., Berger, H., Lorusso, G.F., Capozzi, V., Perna, G., Ibrahim, M.M., and Margaritondo, G., The growth and properties of single crystals of GaInTe2, a ternary chalcogenide semiconductor, J. Phys. D: Appl. Phys., 1998, vol. 31, no. 12, pp. 1433–1437.