Planar buried crescent InP/InGaAsP/InP heterostructure on p-InP
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Link
http://link.springer.com/content/pdf/10.1134/S002016850809001X.pdf
Reference9 articles.
1. Miya, T., Terunuma, Y., Hosaka, T., and Miyashita, T., Ultimate Low-Loss Single-Mode Fibre at 1.55 μm, Electron. Lett., 1979, vol. 15, pp. 106–108.
2. Hirao, M., Doi, A., Tsuji, S., et al., Fabrication and Characterization of Narrow Stripe InGaAsP/InP Buried Heterostructure Lasers, J. Appl. Phys., 1980, vol. 51, pp. 4539–4540.
3. Mito, I., Kitamura, M., Kaede, K., et al., InGaAsP Planar Buried Heterostructure Laser Diode (PBH-LD) with Very Low Threshold Current, Electron. Lett., 1982, vol. 18, pp. 2–3.
4. Mito, I., Kitamura, M., and Kobayashi, K., Double-Channel Planar Buried-Heterostructure Laser Diode with Effective Current Confinement, Electron. Lett., 1982, vol. 18, pp. 953–954.
5. Ishikawa, H., Imai, H., Tanahashi, T., et al., V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 μm Wavelength, IEEE J. Quantum Electron., 1982, vol. QE-18, pp. 1704–1711.
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