Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon-Reference-Cited by-同舟云学术

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Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

Published:2022-01 Issue:1 Volume:58 Page:1-6
ISSN:0020-1685
Container-title:Inorganic Materials
language:en
Short-container-title:Inorg Mater

Author:

Bakhadyrkhanov M. K.,Kenzhaev Z. T.,Koveshnikov S. V.,Usmonov A. A.,Mavlonov G. Kh.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Link

https://link.springer.com/content/pdf/10.1134/S0020168522010034.pdf

Reference22 articles.

1. Wagner, H., Ohrdes, T., Dastgheib-Shirazi, A., Puthen-Veettil, B., Konig, D., and Altermatt, P.P., A numerical simulation study of gallium phosphide/silicon heterojunction passivated emitter and rear solar cells, J. Appl. Phys. Jpn., 2014, vol. 115, no. 4, paper 044508.https://doi.org/10.1063/1.4863464

2. Shestakov, V.A. and Kosyakov, V.I., Transformation of the phase diagram of a ternary system with stoichiometric compounds with varying its state parameters, Russ. J. Inorg. Chem., 2021, vol. 66, pp. 401–404.https://doi.org/10.1134/S0036023621030165

3. Mil’vidskii, M.G. and Chaldyshev, V.V., Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties, Semiconductors, 1998, vol. 32, no. 5, pp. 457–465.https://doi.org/10.1134/1.1187418

4. Gudovskikh, A.S., Kudryashov, D.A., Baranov, A.I., et al., A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition, Tech. Phys. Lett., 2021, vol. 47, no. 1, pp. 96–98.https://doi.org/10.1134/S1063785021010211

5. Lunin, L.S., Lunina, M.L., Pashchenko, A.S., Alfimova, D.L., Arustamyan, D.A., and Kazakova, A.E., Cascade solar cells based on GaP/Si/Ge nanoheterostructures, Tech. Phys. Lett., 2019, vol. 45, no. 6, pp. 7–9.https://doi.org/10.1134/S1063785019030313

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1. Effect of transition metals co-dopant on eliminating boron and phosphorous impurities from silicon;Separation and Purification Technology;2024-04

2. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2024-02

3. Composition of silicon jointly doped with impurity atoms of gallium and phosphorus;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2024-01-15

4. A Surface Study of Si Doped Simultaneously with Ga and Sb;East European Journal of Physics;2023-09-04

5. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon;Physics of the Solid State;2022-11

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