1. Alferov, Zh.I., Past and future of semiconductor heterostructures, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1998, vol. 32, no. 1, pp. 3–17.
2. Dolginov, L.M., Eliseev, P.G., and Ismailov, I., Lightemitting injection devices based on multicomponent semiconductor solid solutions, Itogi Nauki Tekh., Ser.: Radiotekh., 1980, vol. 21, pp. 3–115.
3. Khvostikov, V.P., Lunin, L.S., Kuznetsov, V.V., Oliva, E.V., Khvostikova, O.A., and Shvarts, M.Z., InAs based multicomponent solid solutions for thermophotovoltaic converters, Tech. Phys. Lett., 2003, vol. 29, no. 10, pp. 851–855.
4. Rogalski, A., New material systems for third generation infrared photodetectors, Opt.-Electron. Rev., 2008, vol. 16, no. 4, pp. 458–482.
5. Wang, C.A., Choi, H.K., and Ransom, S.L., High quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices, Appl. Phys. Lett., 1999, vol. 75, no. 9, pp. 1305–1309.