1. Georgobiani, A.N., Kotlyarevsky, M.B., and Rogozin, I.V., Methods of High-Energy Chemistry in the Technology of Wide-Gap Chalcogenide Semiconductors, Inorg. Mater., 2004, vol. 40,suppl. 1, pp. S1–S18.
2. Martinaitis, A.V., High-Temperature Study of Point Defects in Cadmium Selenide Crystals in Selenium Vapor, Extended Abstract of Cand. Sci. (Phys.-Math.) Dissertation, Vilnius, 1978.
3. Sakalas, A.P., Electrical and Photoelectric Properties of n- and p-Type Cadmium Selenide, Extended Abstract of Doctoral (Phys.-Math.) Dissertation, Vilnius, 1976.
4. Vlasenko, N.A., Denisova, Z.A., Vitrikhovskii, N.I., and Pavlenko, V.F., On the Nature of Emission Centers in Pure Cadmium Sulfide, Opt. Spektrosk., 1966, no. 21, pp. 466–475.
5. Ermolovich, I.B., Matvievskaya, G.I., Pekar’, G.S., and Sheinkman, M.K., Luminescence of Donor- and Acceptor-Doped CdS Single Crystals, Ukr. Fiz. Zh. (Russ. Ed.), 1974, vol. 18, no. 5, pp. 732–741.