1. Zagirnyak, M.V., Oksanich, A.P., Petrenko, V.R., Pritchin, S.E., and Terban, V.A., Development of a mathematical model and prediction regulator for the growth of semi-insulating gallium arsenide single crystals, ASU Prib. Avtomat., 2011, no. 155, pp. 33–42.
2. Kim, J.M., Dutta, P.S., Brown, E., Borrego, J.M., and Greiff, P., Wet chemical etching process for wafer scale isolation and interconnection of GaSb based device layers grown on GaAs substrates, J. Vac. Sci. Technol. B, 2013, vol. 31, no. 3, paper 031 204.
3. Orlov, V.G. and Sergeev, G.S., Numerical simulation of the transport properties of indium antimonide, Phys. Solid State, 2013, vol. 55, no. 11, pp. 2215–2222.
4. Perevoshchikov, V.A., Dynamic chemical polishing of semiconductor surfaces, Vysokochist. Veshchestva, 1995, no. 2, pp. 5–29.
5. Notten, P.H.L. and Damen, A.A.J.M., The electrochemistry of InP in Br2/HBr solutions and its relevance to etching behavior, Appl. Surf., 1987, vol. 28, no. 4, pp. 331–344.