Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy-Reference-Cited by-同舟云学术

Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

Published:2007-04 Issue:4 Volume:43 Page:331-337
ISSN:0020-1685
Container-title:Inorganic Materials
language:en
Short-container-title:Inorg Mater

Author:

Denisov S. A.,Svetlov S. P.,Chalkov V. Yu.,Shengurov V. G.,Pavlov D. A.,Korotkov E. V.,Pitirimova E. A.,Trushin V. N.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Link

http://link.springer.com/content/pdf/10.1134/S0020168507040012.pdf

Reference11 articles.

1. Richmond, E.D., MBE-Grown Silicon on Sapphire $$(1\overline 1 02)$$ , Thin Solid Films, 1990, no. 192, pp. 287–294.

2. Richmond, E.D., Twigg, M.E., Qadri, S., et al., Molecular Beam Epitaxy versus Chemical Vapor Deposition of Silicon on Sapphire, Appl. Phys. Lett., 1990, vol. 56, no. 25, pp. 2551–2553.

3. Bean, J.C., Growth of Thin Silicon Films on Sapphire and Spinel by Molecular Beam Epitaxy, Appl. Phys. Lett., 1980, vol. 36, pp. 741–743.

4. Svetlov, S.P., Shengurov, V.G., Tolomasov, V.A., et al., Apparatus for Sublimation-Source Silicon Molecular Beam Epitaxy, Prib. Tekh. Eksp., 2001, no. 5, pp. 137–140.

5. Shengurov, V.G., Svetlov, S.P., Tolomasov, V.A., and Chalkov, V.Yu., Ultrahigh-Vacuum Substrate Heater, Prib. Tekh. Eksp., 2004, no. 5, p. 158.

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