1. Vertoprakhov, V.N. and Sal’man, E.G., Termostimulirovannye toki v neorganicheskikh veshchestvakh (Thermally Stimulated Currents in Inorganic Materials), Novosibirsk: Nauka, 1979, p. 336.
2. Gorokhovatskii, Yu.A. and Bordovskii, G.A., Termoaktivatsionnaya tokovaya spektroskopiya vysokoomnykh poluprovodnikov i dielektrikov (Thermally Stimulated Current Spectroscopy of High-Resistivity Semiconductors and Insulators), Moscow: Nauka, 1991.
3. Milnes, A.G., Deep Impurities in Semiconductors, New York: Wiley, 1973. Translated under the title Primesi s glubokimi urovnyami v poluprovodnikakh, Moscow: Mir, 1977, p. 562.
4. Skorikov, V.M., Chmyrev, V.I., Zuev, V.V., and Larina, E.V., Thermally Stimulated Currents in Semiconductors: Analysis of Rate Equations for a Single-Level Model and Thermally Stimulated Currents in Si〈P,Au〉, Neorg. Mater., 2002, vol. 38, no. 8, pp. 903–936 [Inorg. Mater. (Engl. Transl.), vol. 38, no. 8, pp. 751–780].
5. Chmyrev, V.I., Skorikov, V.M., Zuev, V.V., and Larina, E.V., Evaluation of Impurity Concentration in Semiconductors from the Relaxation of Thermally Stimulated Currents, Neorg. Mater., 2004, vol. 40, no. 7, pp. 775–781 [Inorg. Mater. (Engl. Transl.), vol. 40, no. 7, pp. 673–679].