Author:
Pashchenko A. S.,Chebotarev S. N.,Lunin L. S.
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Reference18 articles.
1. Phillips, J., Evaluation of fundamental properties of quantum dot infrared detectors, J. Appl. Phys., 2002, vol. 91, no. 7, pp. 4590–4594.
2. Stranski, I.N. and Krastanow, L., Zur Theorie der orientierten Ausscheidung von Ionenkristailen aufeinander, Sitzungsber. Akad. Wiss. Wien, Math.-Naturwiss. Kl., Abt. IIB, 1938, vol. 146, pp. 797–810.
3. Antonov, A.V., Vostokov, N.V., Drozdov, M.N., et al., Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region, Semiconductors, 2010, vol. 44, no. 11, pp. 1464–1466.
4. Moldavskaya, L.D., Vostokov, N.V., Gaponova, D.M., et al., The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors, Semiconductors, 2008, vol. 42, no. 1, pp. 99–103.
5. Yakimov, A.I., Dvurechenskii, A.V., Proskuryakov, Yu.Yu., et al., Normal-incidence infrared photoconductivity in Si pin diode with embedded Ge self-assembled quantum dots, Appl. Phys. Lett., 1999, vol. 75, no. 10, pp. 1413–1415.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献