Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas-Reference-Cited by-同舟云学术

Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas

Published:2016-11 Issue:11 Volume:42 Page:1061-1063
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Vendik O. G.,Vendik I. B.,Tural’chuk P. A.,Parnes Ya. M.,Parnes M. D.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785016110110.pdf

Reference12 articles.

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3. L. Borisov and G. Shchelkunov, Elektronika, No. 4, 102 (2012).

4. G. Formicone, F. Boueri, and B. Battaglia, in Proceedings of the IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems COMCAS, Tel Aviv, Israel, October 21–23, 2013, p. 4.

5. A. Grebennicov, Switchmode RF and Microwave Power Amplifier (Academic, New York, 2012), p. 345.

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