MOVPE of III-N LED structures with short technological process-Reference-Cited by-同舟云学术

MOVPE of III-N LED structures with short technological process

Published:2015-03 Issue:3 Volume:41 Page:213-216
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Lundin W. V.,Davydov D. V.,Zavarin E. E.,Popov M. G.,Sakharov A. V.,Yakovlev E. V.,Bazarevskii D. S.,Talalaev R. A.,Tsatsulnikov A. F.,Mizerov M. N.,Ustinov V. M.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785015030116.pdf

Reference8 articles.

1. Matsumoto Koh, Prospect of GaN MOCVD: Challenge and Strategy for Various Substrate Materials, LED Forum, November 1–2, 2012, Taipei, Taiwan. http://seminar.ledinside.com/Ledforum/cur-rent/US/sharing_ppt/1-9Taiyo.pdf ).

2. M. Dauelsberg, D. Brien, R. Pusche, et al., J. Cryst. Growth 315, 224 (2011).

3. A. Gurary, B. Mitrovic, E. Armour, et al., Abstracts of the 4th International Symposium on Growth of III-Nitrides (July 16–19, 2012, St. Petersburg, Russia), p. 6.

4. K. Matsumoto, H. Tokunaga, and A. Ubukata, J. Cryst. Growth 310, 3950 (2008).

5. W. V. Lundin and A. V. Sakharov, Semicond. Sci. Technol. 26, 014 039 (2011).

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