Electron localization in sound absorption oscillations in the quantum Hall effect regime-Reference-Cited by-同舟云学术

Electron localization in sound absorption oscillations in the quantum Hall effect regime

Published:1997-04 Issue:4 Volume:31 Page:384-390
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Drichko I. L.,D’yakonov A. M.,Kreshchuk A. M.,Polyanskaya T. A.,Savel’ev I. G.,Smirnov I. Yu.,Suslov A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187168.pdf

Reference13 articles.

1. D. G. Polyakov and B. I. Shklovskii, Phys. Rev. B 48, 11 167 (1993).

2. Yu. M. Gal’perin, E. M. Gershenzon, I. L. Drichko, and L. B. Litvak-Gorskaya, Fiz. Tekh. Poluprovodn. 24, 3 (1990) [Sov. Phys. Semicond. 24, 1 (1990)].

3. Yu. M. Gal’perin, I. L. Drichko, and L. B. Litvak-Gorskaya, Fiz. Tverd. Tela (Leningrad) 30, 3118 (1988) [Sov. Phys. Solid State 30, 1792 (1988)]; B. A. Aronzon and I. L. Drichko, Fiz. Tekh. Poluprovodn. 26, 1446 (1992) [Sov. Phys. Semicond. 26, 811 (1992)].

4. A. Schenstrom, Y. J. Quan, M. F. Xu, H. P. Baum, M. Levy, and B. K. Sarma, Solid State Commun. 65, 739 (1988).

5. A. Wixforth, J. P. Kotthaus, and G. Weimann, Phys. Rev. Lett. 56, 2104 (1986); A. Wixforth, J. Scriba, M. Wassermeier, J. P. Kotthaus, G. Weiman, and W. Schlapp, Phys. Rev. 40, 7874 (1989).

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